Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC)-Reference-Cited by-同舟云学术

Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC)

Published:2023-06-10 Issue:10 Volume:29 Page:1403-1416
ISSN:0946-7076
Container-title:Microsystem Technologies
language:en
Short-container-title:Microsyst Technol

Author:

Neeraj Neeraj^ORCID,Sharma Shobha,Goel Anubha,Rewari Sonam,Gupta R. S.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s00542-023-05480-3.pdf

Reference33 articles.

1. Adel SS, Smith KC (2020) Microelectronics circuit, 8th edn. Oxford

2. Arunprathap S, Napolean A, Azariah A (2014) Fabrication of thin film transistor using high K dielectric materials. Int J Eng Comput Sci 3(4):5387–5391

3. ATLAS: 3D device simulator, SILVACO international, 2018

4. Baliga J, Gallium B (2016) Nitride and silicon carbide power devices. World Scientific Publishing Company, Singapore

5. Cheong KY, Moon JH, Eom D, Kim HJ, Bahng W, Kim NK (2007) Electronic properties of atomic-layer-deposited Al2O3/thermal nitride SiO2 stacking dielectric on 4H-SiC. Electrochem Solid State Lett 10(2):69–71

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1. Impact of Interface Trap Charges on Silicon Carbide (4H-SiC) Based Gate – Stack, Dual Metal, Surrounding Gate, FET (4H-SiC- GSDM-SGFET) for Analog and Noise Performance Analysis for 5 G/LTE Applications;ECS Journal of Solid State Science and Technology;2024-07-01

2. Dielectric pocket engineered, gate induced drain leakages (GIDL) and analog performance analysis of dual metal nanowire ferroelectric MOSFET (DPE-DM-NW-Fe FET) as an inverter;Microsystem Technologies;2024-05-09

3. Correction: Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4 H-SiC);Microsystem Technologies;2024-04-18

4. Accurate 2-D analytical model for cylindrical gate-junctionless ferroelectric-nanowire (CG-JFe-NW) MOSFET with scaled channel length;Physica Scripta;2024-04-15