Accurate 2-D analytical model for cylindrical gate-junctionless ferroelectric-nanowire (CG-JFe-NW) MOSFET with scaled channel length

Abstract

Abstract In this article, we propose a 2D analytical-model of a cylindrical gate-junctionless ferroelectric-nanowire (CG-JFe-NW) MOSFET for evaluating central potential, electric field, threshold voltage, mobility and current voltage characteristics. Central potential, threshold voltage, and current in the linear and saturation regions are derived by solving the 2D Poisson’s equation employing the parabolic-potential- approximation (PPA) profile. The recommended model is appropriate for compact modelling as it includes the phenomenon of bulk conduction, surface conduction and ferroelectric negative capacitance in all the regions of the device operation. Ferroelectric properties are introduced by combining Silicon doped hafnium oxide (ferroelectric layer) with HfO2 and SiO2 (dielectric layers), and an extensive study has been performed to determine the effects of interfacial-layer thickness and variation of channel length on device performance. For all relevant device characteristics and for all the operational voltage ranges, it is demonstrated that the analytical model entirely corresponds with the numerical simulations. For simulations, the Atlas 3-D simulator has been taken into consideration.