Growth of device-quality GaAs layer directly on (001) Ge substrates by both solid-source and gas-source MBE-Reference-Cited by-同舟云学术

Growth of device-quality GaAs layer directly on (001) Ge substrates by both solid-source and gas-source MBE

Published:2001-07 Issue: Volume:227-228 Page:104-107
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Li W.,Laaksonen S.,Haapamaa J.,Pessa M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

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2. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

3. A closer study on the self-annihilation of antiphase boundaries in GaAs epilayers

4. Atomic-step rearrangement on Si(100) by interaction with arsenic and the implication for GaAs-on-Si epitaxy

5. Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxy

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