Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Molecular beam epitaxy of Ge and Ga1−xAlxAs ultra thin film superlattices
2. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
3. Molecular beam epitaxy of Ge–GaAs superlattices
4. Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
5. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
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