High-quality GaN epilayer grown by newly designed horizontal counter-flow MOCVD reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Chemical approaches to the Metalorganic CVD of Group-III Nitrides
3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
4. Novel metalorganic chemical vapor deposition system for GaN growth
5. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
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