Reduction of dislocation generation for heteroepitaxial III-V/Si by slow cooling
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Dislocation generation of GaAs on Si in the cooling stage
2. Dislocation Generation of III-V Semiconductors by the Biaxial Stress in GaAs/SiO2, InP/SiO2and III-V/Si Structure
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