Effect of Cooling Rate on the Activation of Slip Systems in Seed Cast-Grown Monocrystalline Silicon in the [001] and [111] Directions
Author:
Affiliation:
1. Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
2. National Institute for Materials Science, 1-1 Namiki, Tsukuba-city Ibaraki 305-0047 Japan
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg400428z
Reference28 articles.
1. Crystalline Silicon Photovoltaic Cells
2. Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace
3. Influence of Back-Diffusion of Iron Impurity on Lifetime Distribution near the Seed-Crystal Interface in Seed Cast-Grown Monocrystalline Silicon by Numerical Modeling
4. Anisotropic Thermal Stress Simulation with Complex Crystal–Melt Interface Evolution for Seeded Growth of Monocrystalline Silicon
5. Dislocation Analysis of a New Method for Growing Large-Size Crystals of Monocrystalline Silicon Using a Seed Casting Technique
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