Influence of Back-Diffusion of Iron Impurity on Lifetime Distribution near the Seed-Crystal Interface in Seed Cast-Grown Monocrystalline Silicon by Numerical Modeling-Reference-Cited by-同舟云学术

Influence of Back-Diffusion of Iron Impurity on Lifetime Distribution near the Seed-Crystal Interface in Seed Cast-Grown Monocrystalline Silicon by Numerical Modeling

Published:2011-12-19 Issue:1 Volume:12 Page:522-525
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Gao Bing¹,Nakano Satoshi¹,Kakimoto Koichi¹

Affiliation:

1. Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg201465t

Reference8 articles.

1. Influence of seed/crystal interface shape on dislocation generation in Czochralski Si crystal growth

2. Structural quality of the interface seed crystal in rapidly grown KDP crystals for high-power lasers

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