Effect of interfacial AsH3 surge treatment on GaInP/GaAs dual-junction solar cells grown by metal–organic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Effect of interfacial AsH3 surge treatment on GaInP/GaAs dual-junction solar cells grown by metal–organic vapor phase epitaxy

Published:2018-07-20 Issue:8 Volume:57 Page:080311
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kang Seokjin,Choi Hee Ju,Kang Eun Kyu,Ju Gun Wu,Min Jung-Wook,Lee Yong Tak,Lee Dong-Seon,Park Kwangwook,Kim Hyo Jin

Funder

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=8/a=080311/pdf

Reference33 articles.

1. Solar cell efficiency tables (version 51)

2. Structural optimization for single junction InGaP solar cells

3. High efficiency GaAs solar cells using GaInP/sub 2/ window layers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of growth interruption on InGaP fabricated via hydride vapor phase epitaxy;Journal of Crystal Growth;2020-08

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