Formation mechanism of volcano-like structural defects in multiple periods of InAs quantum dots on GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Critical layer thickness for self-assembled InAs islands on GaAs
2. Self-organized growth of strained InGaAs quantum disks
3. Multidimensional quantum well laser and temperature dependence of its threshold current
4. Structural defects in the growth of multiple periods of InAs quantum dots on a GaAs substrate
5. Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation
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1. Role of Sb on the vertical-alignment of type-II strain-coupled InAs/GaAsSb multi quantum dots structures;Journal of Alloys and Compounds;2020-08
2. Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures;Applied Surface Science;2020-04
3. Characterization of the morphology and optical properties of InAs∕AlAs quantum dots with a GaAs insertion layer;Journal of Applied Physics;2007-03-15
4. Improvements of stacked self-assembled InAs/GaAs quantum dot structures for 1.3μm applications;Microelectronics Journal;2006-12
5. Transition of 3D to 2D growth modes of InAs grown on GaAs;Applied Surface Science;2006-03
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