Improvements of stacked self-assembled InAs/GaAs quantum dot structures for 1.3μm applications-Reference-Cited by-同舟云学术

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Improvements of stacked self-assembled InAs/GaAs quantum dot structures for 1.3μm applications

Published:2006-12 Issue:12 Volume:37 Page:1446-1450
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Ng J.,Missous M.

Publisher

Elsevier BV

Subject

General Engineering

Reference15 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Gain and the threshold of three-dimensional quantum-box lasers

3. I.N. Stranski, L. Krastanow, Akad. Weiss. Lit. Mainz Math.-Natur Kl., 1939.

4. Room temperature lasing from InGaAs quantum dots

5. 1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

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1. An Overview of Paclitaxel and Molecular Imprinted Polymers Capped with Quantum Dots as an Alternative Approach for Paclitaxel Extraction and Detection;Current Materials Science;2023-07

2. Efficiency enhancement of solar cells using multi-layer interdiffused InGaAs/ GaAs quantum dots: A numerical approach;Micro and Nanostructures;2022-12

3. An Overview of Molecularly Imprinted Polymers Embedded with Quantum Dots and Their Implementation as an Alternative Approach for Extraction and Detection of Crocin;ChemistrySelect;2022-06

4. Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures;Applied Surface Science;2020-04

5. Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices;IET Optoelectronics;2014-04

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