Characterization of the morphology and optical properties of InAs∕AlAs quantum dots with a GaAs insertion layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2714689
Reference22 articles.
1. Critical layer thickness for self-assembled InAs islands on GaAs
2. Atom-resolved scanning tunneling microscopy of vertically ordered InAs quantum dots
3. 1.3 μm room-temperature GaAs-based quantum-dot laser
4. Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
5. High detectivity InAs quantum dot infrared photodetectors
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1. Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy;Microelectronic Engineering;2013-12
2. Effects of ultra-low Al alloying In(Al)As layer on the formation and evolution of InAs/GaAs quantum dots;Journal of Applied Physics;2011-05
3. Effects of group-III elements on the growth kinetics of shape-engineered InAs/InAlGaAs quantum dots;Thin Solid Films;2009-05
4. Analysis of surface dark current dependent upon surface passivation in APD based on GaAs;Semiconductor Science and Technology;2009-05-01
5. Comparative analysis of dark current between SiNxand polyimide surface passivation of an avalanche photodiode based on GaAs;Semiconductor Science and Technology;2009-04-15
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