Structural defects in the growth of multiple periods of InAs quantum dots on a GaAs substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers
3. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)
4. Third Korean Conference on Semiconductors;Lee,1996
5. Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer
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