SiC-bulk growth by physical-vapor transport and its global modelling-Reference-Cited by-同舟云学术

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SiC-bulk growth by physical-vapor transport and its global modelling

Published:1997-04 Issue:1-4 Volume:174 Page:669-674
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hofmann D.,Eckstein R.,Kölbl M.,Makarov Y.,Müller St.G.,Schmitt E.,Winnacker A.,Rupp R.,Stein R.,Völkl J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Investigation of growth processes of ingots of silicon carbide single crystals

2. Single crystal growth of SiC substrate material for blue light emitting diodes

3. First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor

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1. Influence of Net Doping Concentration on Carrier Lifetime in 4H-SiC Substrates;Journal of Electronic Materials;2024-03-06

2. The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology;Diamond and Related Materials;2023-06

3. SiC Single Crystal Semiconductors;Silicon Carbide Ceramics;2023

4. Sticking coefficient and Si/C ratio of silicon carbide growth species on reconstructed 4H−SiC(0001‾) surface by ab-initio calculations;Vacuum;2022-11

5. Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment;CrystEngComm;2021

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