Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3μm luminescence
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
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4. 1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots
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2. Impact of dislocations in InAs quantum dot with InGaAs strain-reducing layer structures on their optical properties;Japanese Journal of Applied Physics;2021-02-24
3. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence;Semiconductors;2016-11
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