Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence-Reference-Cited by-同舟云学术

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Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Published:2016-11 Issue:11 Volume:50 Page:1499-1505
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kosarev A. N.,Chaldyshev V. V.,Preobrazhenskii V. V.,Putyato M. A.,Semyagin B. R.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782616110154.pdf

Reference27 articles.

1. H. Liu, T. Wang, Q. Jiang, R. Tutu, F. Pozzi, and A. Seeds, Nat. Photon. 5, 416 (2011).

2. S. Mikhrin, A. Zhukov, A. Kovsh, N. Maleev, V. Ustinov, Yu. Shernyakov, I Kayander, E. Kondrat’eva, D. Livshits, I. Tarasov, M. Maximov, A. Tsatsulnikov, N. Ledentsov, P. Kop’ev, D. Bimberg, and Zh. Alferov, Semiconductors 34, 119 (2000).

3. N. Ledentsov, Semicond. Sci. Technol. 26, 014001 (2011).

4. J. Wu, S. Chen, A. Seeds, and H. Liu, J. Phys. D: Appl. Phys. 48, 363001 (2015).

5. A. Marent, T. Nowozin, M. Geller, and D. Bimberg, Semicond. Sci. Technol. 26, 014026 (2011).

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2. Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles;Optics and Spectroscopy;2019-05

3. Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs;physica status solidi (b);2019-01-11

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