Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. MOCVD Growth of GaN on bulk AlN Substrates
3. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
4. Growth of high purity AlN crystals
5. Ain single crystals
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3. Growth of AlN and GaN crystals by sublimation;Single Crystals of Electronic Materials;2019
4. Crystal growth of AlN: Effect of SiC substrate;Materials Science in Semiconductor Processing;2012-08
5. Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer;Crystal Research and Technology;2012-01-24
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