Investigation of metal–GaN and metal–AlGaN contacts by XPS depth profiles and by electrical measurements
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. AlGaN Photodiodes For Monitoring Solar UV Radiation
2. Ohmic contacts to p-type GaN using a Ni/Pt/Au metallization scheme
3. Fabrication of GaN mesa structures
4. High quality GaN grown by MOVPE
5. p-doping of GaN by MOVPE
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3. Defect controls by silicon doping in non-polar a-plane AlGaN epi-layers;Materials Express;2021-09-01
4. Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System;Scientific Reports;2018-06-04
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