Author:
Vassilevski K.V.,Rastegaeva M.G.,Babanin A.I.,Nikitina I.P.,Dmitriev V.A.
Abstract
We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity Rc ~2×10−5 Ω×cm2 and Ni ohmic contacts for p-doped GaN with Rc ~ 4×10−2 Ω×cm2 were formed. Both types of contacts were used as masks for GaN reactive ion etching (RIE) in a CCl2F2/Ar gas mixture. Maximum etch rates of ~ 40 nm/min were obtained. Mesa structures up to 3 μm in height were formed.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Cited by
22 articles.
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