Fabrication of GaN-Based Resonant Cavity LEDs-Reference-Cited by-同舟云学术

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Fabrication of GaN-Based Resonant Cavity LEDs

Published:2002-08 Issue:2 Volume:192 Page:348-353
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Maaskant P.,Akhter M.,Roycroft B.,O'Carroll E.,Corbett B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. and Proc. 10th Internat. Plastic Optical Fibres Conf., Amsterdam, September 27-30, 2001 (pp. 81-87).

2. Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN

3. X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers

4. Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient

5. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment

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3. Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side;physica status solidi (c);2014-01-24

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