Biassed secondary electron imaging of monatomic surface steps on vicinal Si(100) in a UHV STEM
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Secondary electron detection in the scanning transmission electron microscope
2. Excitations at interfaces and small particles
3. High-resolution scanning electron microscopy of surface reactions
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