Dislocation propagation in GaN films formed by epitaxial lateral overgrowth
Author:
Publisher
Oxford University Press (OUP)
Subject
Instrumentation
Link
http://academic.oup.com/jmicro/article-pdf/49/2/323/2664334/49-2-323.pdf
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. MOCVD of Nitrides;Handbook of Crystal Growth;2015
3. Self-assembly of Ge clusters on highly oriented pyrolytic graphite surfaces;Surface Science;2014-10
4. Growth of High-Quality GaN Template from Nanometer-Size Lattice Channels by Hydride Vapor Phase Epitaxy;ECS Transactions;2013-08-31
5. Two-step lateral growth of GaN for improved emission from blue light-emitting diodes;Journal of Crystal Growth;2013-06
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