Two-step lateral growth of GaN for improved emission from blue light-emitting diodes-Reference-Cited by-同舟云学术

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Two-step lateral growth of GaN for improved emission from blue light-emitting diodes

Published:2013-06 Issue: Volume:372 Page:157-162
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Park Young Jae,Kang Ji Hye,Kim Hyun Kyu,Katharria Yashpal Singh,Han Nam,Han Min,Ryu Beo Deul,Suh Eun-Kyung,Cho Hyung Koun,Hong Chang-Hee

Funder

Ministry of Education, Science and Technology

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Solid-State Light Sources Getting Smart

2. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

3. Scattering of electrons at threading dislocations in GaN

4. Accurate dependence of gallium nitride thermal conductivity on dislocation density

5. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

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1. Size dependence of silica nanospheres embedded in 385 nm ultraviolet light-emitting diodes on a far-field emission pattern;Optics Express;2014-09-29

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