New models for ohmic contacts to GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs
2. Gallium-vacancy-dependent diffusion model of ohmic contacts to GaAs
3. Diffusion of gallium in thin gold films on GaAs
4. Effect of annealing process parameters on the properties of AuGe ohmic contacts to GaAs
5. Diffusion model for Ohmic contacts to GaAs
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures;Semiconductor Science and Technology;2013-01-03
2. Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact ton‐type GaAs;Journal of Applied Physics;1996-10
3. Ballistic electron emission microscopy studies of electron scattering in Au/GaAs Schottky diodes damaged by focused ion beam implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-03-01
4. Evolution of the microstructure of Au(Zn) metallization during formation of an ohmic contact to p-type GaAs;Thin Solid Films;1994-06
5. Annealing behavior of Au(Te)/n-GaAs contacts;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05
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