Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact ton‐type GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363347
Reference25 articles.
1. Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact ton‐type GaAs
2. Sintered ohmic contacts to n-and p-type GaAs
3. Low resistance Pd/Ge/Au and Ge/Pd/Au ohmic contacts ton‐type GaAs
4. Ohmic contacts ton‐type GaAs using high‐temperature rapid thermal annealing for self‐aligned processing
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1. Magnetodielectric coupling in nonmagnetic Au/GaAs:Si Schottky barriers;Physical Review B;2009-11-24
2. Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-µm-Thick CdTe Thin Film Solar Cells;Japanese Journal of Applied Physics;2002-05-15
3. The ohmic contact formation mechanism of Au/Pt/Pd ohmic contact to p-ZnTe;Journal of Electronic Materials;1999-08
4. Application of a Slow Positron Beam to the PdGe Ohmic Contact on GaAs;Japanese Journal of Applied Physics;1998-06-15
5. Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer;Applied Physics Letters;1997-11-03
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