Effect of annealing process parameters on the properties of AuGe ohmic contacts to GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336949
Reference11 articles.
1. GaAs metallization: Some problems and trends
2. Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques
3. The effect of the metallurgical properties of the In-GaAs interface on the electrical properties of ohmic contacts to GaAs
4. Metallization systems for silicon integrated circuits
5. Low resistance ohmic contacts to n- and p-InP
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