Thermal stability of TaSix/n-GaAs metallizations-Reference-Cited by-同舟云学术

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Thermal stability of TaSix/n-GaAs metallizations

Published:1989-09 Issue:2 Volume:176 Page:187-196
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Paccagnella A.,Han C.C.,Lau S.S.,Gasparotto A.,Carnera A.,Canali C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Thermal and chemical stability of Schottky metallization on GaAs

2. Phase equilibria in metal‐gallium‐arsenic systems: Thermodynamic considerations for metallization materials

3. Layered Structures and Interface Kinetics,1985

4. Thermal stability of WSix/GaAs interface

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An AES study of the room-temperature oxidation of TaSixafter bombardment with Ar+ions of different energies;Surface and Interface Analysis;1990-07

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