Thermal stability of WSix/GaAs interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338860
Reference12 articles.
1. Refractory metal silicides for self-aligned gate modulation doped n+-(Al,Ga)As/GaAs field-effect transistor integrated circuits
2. A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure
3. Characterization of WSix/GaAs Schottky contacts
4. Capacitance–voltage characterization of silicide–GaAs Schottky contacts
5. Forward current-voltage characteristics of Schottky barriers on n-type silicon
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