Thermal and chemical stability of Schottky metallization on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96311
Reference8 articles.
1. TiW Silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI's
2. Characterization of tantalum-silicon films on GaAs at elevated temperatures
3. Contact properties of tantalum‐silicon films onn‐ andp‐type InP
4. Refractory metal contacts to GaAs: Interface chemistry and Schottky‐barrier formation
5. Rare‐earth metal Schottky‐barrier contacts to GaAs
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