Contact properties of tantalum‐silicon films onn‐ andp‐type InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333342
Reference16 articles.
1. Schottky contacts on chemically etched p‐ and n‐type indium phosphide
2. A comparison of Pd Schottky contacts on InP, GaAs and Si
3. Correlation of Fermi‐level energy and chemistry at InP(100) interfaces
4. Atomic and electronic structure of InP–metal interfaces: A prototypical III–V compound semiconductor
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal stability of rapidly annealed CoSi2/n‐GaAs and CoSi2/p‐InP Schottky contacts;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-07
2. Rapid thermal stability of refractory metal and silicide contacts on p-InP;Physica Status Solidi (a);1994-06-16
3. On the electrical properties, the interfacial reactivity and the thermal stability of CoSi2/-, TiSi2/-, Co/- and Ti/p-InP Schottky barriers;Solid-State Electronics;1990-01
4. Thermal and chemical stability of Schottky metallization on GaAs;Applied Physics Letters;1985-12-15
5. The Effects of Ion Beam Etching on Si, Ge, GaAs , and InP Schottky Barrier Diodes;Journal of The Electrochemical Society;1985-04-01
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