An AES study of the room-temperature oxidation of TaSixafter bombardment with Ar+ions of different energies-Reference-Cited by-同舟云学术

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An AES study of the room-temperature oxidation of TaSixafter bombardment with Ar+ions of different energies

Published:1990-07 Issue:7 Volume:15 Page:440-446
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Clement M.,Sanz J. M.,Martínez-Duart J. M.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference33 articles.

1. High‐temperature stable TaSix –GaAs Schottky barrier

2. Thermal stability of TaSix/n-GaAs metallizations

3. Thermal stability of WSix/GaAs interface

4. WSi0.11Schottky gates for GaAs metal semiconductor field‐effect transistors

5. Tantalum silicide Schottky contacts to GaAs

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preferential sputtering of argon ion bombarded Ni3Al and TaSi2;Applied Surface Science;1995-10

2. Master equation for atomic collision cascades with fixed path length between collisions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-09

3. Preferential sputtering in binary targets;Progress in Surface Science;1995-06

4. Ion bombardment effects in GeSi(100) surfaces studied by XPS and ISS;Surface Science;1994-04

5. The influence of sputtering on the surface composition of FeSi and TbSi1.7;Applied Surface Science;1993-11

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