Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV Auger lineshape compared with cluster calculations
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference69 articles.
1. Fundamentals and Applications of Auger Electron Spectroscopy
2. Charge transfer, polarization, and relaxation effects on the Auger line shapes of Si
3. Theory of valence-band Auger line shapes: Ideal Si (111), (100), and (110)
4. Valence-band Auger line shapes for Si surfaces: Simplified theory and corrected numerical results
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1. Quenching the surface electronic structure of P-containing III–V semiconductors via ordered (1×1) Sb overlayers: a PL2,3VV Auger line shape analysis;Surface Science;1992-05
2. Kinetics of the adsorption of atomic oxygen (N2O) on the Si(001)2 × 1 surface as revealed by the change in the surface conductance;Surface Science;1992-01
3. The Role of Inter-Atomic Transitions in AES;Physica Scripta;1992-01-01
4. Overlayer-induced Auger Line-shape Changes: The Case of the PL2, 3VVTransition at the InP(110)/Sb interface;Physica Scripta;1992-01-01
5. Surface local density of states of InP(110) via PL2.3VV Auger lineshape: the role of an ordered (1×1) Sb overlayer;Applied Surface Science;1992-01
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