Quenching the surface electronic structure of P-containing III–V semiconductors via ordered (1×1) Sb overlayers: a PL2,3VV Auger line shape analysis-Reference-Cited by-同舟云学术

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Quenching the surface electronic structure of P-containing III–V semiconductors via ordered (1×1) Sb overlayers: a PL2,3VV Auger line shape analysis

Published:1992-05 Issue: Volume:269-270 Page:838-843
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Sancrotti M.,Duò L.,Marchetti F.,Cosso R.,Weightman P.,Manghi F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference30 articles.

1. X-ray-excited Auger and photoelectron spectroscopy

2. The Contribution of Auger Spectroscopy to the Study of Core Hole Screening and Electron Correlation in Alloys

3. Surface-induced perturbation ofLVVAuger spectra

4. Durbin and Gog reply

5. Surface effects in Si Auger spectrum

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