Kinetics of the adsorption of atomic oxygen (N2O) on the Si(001)2 × 1 surface as revealed by the change in the surface conductance
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference35 articles.
1. Photoemission study of the surface states that pin the Fermi level at Si(100)2 × 1 surfaces
2. Photoemission studies of intrinsic surface states on Si(100)
3. Surface-state band structure of the Si(100)2×1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces
4. Inverse photoemission from semiconductors
5. Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV Auger lineshape compared with cluster calculations
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1. The characteristics of self-assemble N2O monolayer;Physics Letters A;2010-07
2. Chemistry on Silicon Surfaces;PATAI'S Chemistry of Functional Groups;2009-12-15
3. Metastable precursor for oxygen dissociation on Si(001) 2×1 resolved by high lateral resolution work function measurements;Surface Science;2007-06
4. Adsorption model determination of N2O/Ag(110) by theoretical studies of near-edge X-ray absorption fine structure;Applied Surface Science;2006-09
5. Electrical conductance of reconstructed silicon surfaces;Physical Review B;2002-03-08
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