Charge transfer, polarization, and relaxation effects on the Auger line shapes of Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.2574/fulltext
Reference131 articles.
1. Final-state rule for Auger line shapes
2. Transition density of states for Si(100) from L1L23V and L23VV Auger spectra
3. Theory of valence-band Auger line shapes: Ideal Si (111), (100), and (110)
4. Tight-Binding Calculation of a Core-Valence-Valence Auger Line Shape: Si(111)
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