Decay Processes of Si 2sCore Holes in Si(111)-7 × 7 Revealed by Si Auger Electron Si 2sPhotoelectron Coincidence Measurements-Reference-Cited by-同舟云学术

Decay Processes of Si 2sCore Holes in Si(111)-7 × 7 Revealed by Si Auger Electron Si 2sPhotoelectron Coincidence Measurements

Published:2014-09-15 Issue:9 Volume:83 Page:094704
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Mase Kazuhiko¹²,Hiraga Kenta³,Arae Sadanori³,Kanemura Rui³,Takano Yusaku⁴,Yanase Kotaro⁴,Ogashiwa Yosuke⁴,Shohata Nariaki⁵,Kanayama Noritsugu⁶,Kakiuchi Takuhiro⁷,Ohno Shinya³,Sekiba Daiichiro⁵,Okudaira Koji K.⁶,Okusawa Makoto⁴,Tanaka Masatoshi³

Affiliation:

1. Institute of Materials Structure Science, KEK, Tsukuba, Ibaraki 305-0801, Japan

2. The Graduate University for Advanced Studies, Tsukuba, Ibaraki 305-0801, Japan

3. Department of Physics, Faculty of Engineering, Yokohama National University, Yokohama 240-8501, Japan

4. Faculty of Education, Gunma University, Maebashi 371-8510, Japan

5. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

6. Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University, Chiba 263-8522, Japan

7. Department of Chemistry, Faculty of Science, Ehime University, Matsuyama 790-8577, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.7566/JPSJ.83.094704

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local valence electronic states of silicon (sub)oxides on HfO2/Si-(sub)oxide/Si(110) and HfSi2/Si-(sub)oxide/Si(110) Islands;Surface Science;2019-03

2. Direct Observations of Correlation between Si-2p Components and Surface States on Si(110)-16 × 2 Single-Domain Surface Using Si-L23VV Auger-Electron and Si-2p Photoelectron Coincidence Measurements;Journal of the Physical Society of Japan;2017-05-15