Calorimetric study of the adsorption of oxygen and gases HxA on germanium and silicon-Reference-Cited by-同舟云学术

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Calorimetric study of the adsorption of oxygen and gases HxA on germanium and silicon

Published:1969-06 Issue:2 Volume:15 Page:340-344
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Bootsma G.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference12 articles.

1. Ellipsometry in the sub-monolayer region

2. The Nature of the Chemical Bond;Pauling,1960

3. The Strengths of Chemical Bonds;Cottrell,1958

4. THE CONFIGURATION OF COMPLEXES ON SEMICONDUCTOR SURFACES

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adsorption, desorption, and decomposition of HCl and HBr on Ge(100): Competitive pairing and near‐first‐order desorption kinetics;The Journal of Chemical Physics;1994-08

2. Interaction of oxygen with a Ge-covered Si(100) surface;Surface Science;1993-02

3. Oxygen adsorption on a Ge dosed Si(100) surface;Surface Science;1992-11

4. Molecular‐beam study of gas‐surface chemistry in the ion‐assisted etching of silicon with atomic and molecular hydrogen and chlorine;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-05

5. Pulsed laser atom-probe study of clean and oxygen-covered silicon;Applications of Surface Science;1982-07

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