Interaction of oxygen with a Ge-covered Si(100) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference25 articles.
1. Heteroepitaxial Growth and Superstructure of Ge on Si(111)–7×7 and (100)–2×1 Surfaces
2. Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloys
3. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
4. Molecular beam epitaxy and reconstructed surfaces
5. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
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3. Strain-induced work function changes in Ge nano-stripes on Si(001) studied by energy-filtered photoelectron emission microscopy;NUOVO CIM C-COLLOQ C;2012
4. Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates;Journal of Applied Physics;2010-12-15
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