Hydrostatic strain enhancement in laterally confined SiGe nanostripes-Reference-Cited by-同舟云学术

Hydrostatic strain enhancement in laterally confined SiGe nanostripes

Published:2013-09-20 Issue:11 Volume:88 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Vanacore G. M.,Chaigneau M.,Barrett N.,Bollani M.,Boioli F.,Salvalaglio M.,Montalenti F.,Manini N.,Caramella L.,Biagioni P.,Chrastina D.,Isella G.,Renault O.,Zani M.,Sordan R.,Onida G.,Ossikovski R.,Drouhin H.-J.,Tagliaferri A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.88.115309/fulltext

Reference83 articles.

1. Ge/Si nanowire heterostructures as high-performance field-effect transistors

2. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

3. Ge-on-Si laser operating at room temperature

4. Tensilely Strained Germanium Nanomembranes as Infrared Optical Gain Media

5. Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

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