Molecular‐beam study of gas‐surface chemistry in the ion‐assisted etching of silicon with atomic and molecular hydrogen and chlorine-Reference-Cited by-同舟云学术

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Molecular‐beam study of gas‐surface chemistry in the ion‐assisted etching of silicon with atomic and molecular hydrogen and chlorine

Published:1990-05 Issue:3 Volume:8 Page:1969-1976
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Chuang Mei‐Chen,Coburn J. W.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.576790

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Effect of the Cl2 + O2 + Ar Mixture Composition on the Concentrations of Chlorine and Oxygen Atoms in a Plasma;Russian Microelectronics;2022-12

2. Comparative study of Cl2 + O2 and HBr + O2 plasma chemistries in respect to silicon reactive-ion etching process;Vacuum;2021-04

3. On the Control of Plasma Chemistry and Silicon Etching Kinetics in Ternary HBr + Cl2 + O2 Gas System: Effects of HBr/O2 and Cl2/O2 Mixing Ratios;Science of Advanced Materials;2020-05-01

4. Plasma parameters, gas-phase chemistry and Si/SiO2 etching mechanisms in HBr+Cl2+O2 gas mixture: Effect of HBr/O2 mixing ratio;Vacuum;2019-05

5. Peculiarities of Si and SiO2 Etching Kinetics in HBr + Cl2 + O2 Inductively Coupled Plasma;Plasma Chemistry and Plasma Processing;2018-11-10

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