Initial stages of Si-molecular beam epitaxy on Si(111) studied with reflection high-energy electron diffraction intensity measurements and Monte Carlo simulations-Reference-Cited by-同舟云学术

Initial stages of Si-molecular beam epitaxy on Si(111) studied with reflection high-energy electron diffraction intensity measurements and Monte Carlo simulations

Published:1994-12 Issue:3 Volume:321 Page:L255-L260
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Larsson Mats I.,Hansson Göran V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference27 articles.

1. Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth

2. Monolayer and bilayer growth on Ge(111) and Si(111)

3. Scanning tunneling microscopy study of low‐temperature epitaxial growth of silicon on Si(111)‐(7×7)

4. Homo-epitaxial growth on the Si(111) 7 × 7 surface

5. The initial process of molecular beam epitaxial growth of Si on Si(111)7 × 7: a model for the destruction of the 7 × 7 reconstruction

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