Monolayer and bilayer growth on Ge(111) and Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Dynamics of film growth of GaAs by MBE from Rheed observations
2. Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films
3. Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth
4. Observations on intensity oscillations in reflection high‐energy electron diffraction during epitaxial growth of Si(001) and Ge(001)
5. Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high‐energy electron diffraction during molecular beam epitaxy
Cited by 71 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of nucleation on step-meandering instabilities during step-flow growth on vicinal surfaces;Physical Review E;2014-03-20
2. Surface morphology of sputtered Ta2O5thin films on Si substrates from X-ray reflectivity at a fixed angle;Journal of Applied Crystallography;2008-03-08
3. Growth of Ge hexagonal meshwork films on Si(111)-7 × 7;Nanotechnology;2006-08-14
4. Structural phase transition and thermal vibration of surface atoms studied by reflection high-energy electron diffraction;Applied Surface Science;2004-10
5. STUDY OF STRUCTURE CHANGES ON THESiSURFACES USING REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION;International Journal of Modern Physics B;2004-01-30
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3