Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high‐energy electron diffraction during molecular beam epitaxy-Reference-Cited by-同舟云学术

Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high‐energy electron diffraction during molecular beam epitaxy

Published:1986-06-09 Issue:23 Volume:48 Page:1612-1614
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sakamoto T.,Kawamura T.,Hashiguchi G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.96833

Reference8 articles.

1. Dynamics of film growth of GaAs by MBE from Rheed observations

2. Damped oscillations in reflection high energy electron diffraction during GaAs MBE

3. RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)

4. Phase-Locked Epitaxy Using RHEED Intensity Oscillation

5. Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth

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