Growth of Ge hexagonal meshwork films on Si(111)-7 × 7-Reference-Cited by-同舟云学术

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Growth of Ge hexagonal meshwork films on Si(111)-7 × 7

Published:2006-08-14 Issue:17 Volume:17 Page:4413-4415
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Xu M C,Ma H F,Ji W,Yang B,Gao H J

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/17/i=17/a=021/pdf

Reference10 articles.

1. Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STM

2. Growth of Ge–Si(111) epitaxial layers: intermixing, strain relaxation and island formation

3. Surface electronic structure of Si(111)7×7-Ge and Si(111)5×5-Ge studied with photoemission and inverse photoemission

4. Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS

5. Formation of two dimension Ge cluster superlattice on Si()-(7×7) surface

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation;Journal of Materials Research;2017-02-08

2. Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates;Applied Physics Letters;2010-02-15

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