Homo-epitaxial growth on the Si(111) 7 × 7 surface
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Structural study of Si growth on a Si(111)7 × 7 surface
2. Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction
3. Study of the Si(111) 7 × 7 surface structure by alkali- metal adsorption
4. Silicon deposition on Si(111) surfaces at room temperature and effects of annealing
5. RHEED intensity rocking curves from Si(111) surface during MBE growth
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1. Single-step fabrication of homoepitaxial silicon nanocones by molecular beam epitaxy;Applied Surface Science;2018-04
2. On the role of mobile nanoclusters in 2D island nucleation on Si(111)-(7 × 7) surface;Surface Science;2018-01
3. Microscopic mechanism of the homoepitaxy onSi(111)7×7;Physical Review B;2016-07-05
4. Si nucleation on Si(111)-7×7: From cluster pairs to 2D islands;Surface Science;2007-09
5. Multistage nucleation of two-dimensional Si islands onSi(111)−7×7during MBE growth: STM experiments and extended rate-equation model;Physical Review B;2007-07-23
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