Si nucleation on Si(111)-7×7: From cluster pairs to 2D islands
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. Measuring surface diffusion from nucleation island densities
2. Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction
3. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
4. Scanning tunneling microscopy study of low‐temperature epitaxial growth of silicon on Si(111)‐(7×7)
5. Size of small Si and Ge clusters on Si(111) and Ge(111) surfaces
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Intermediate Structures in the Lifting of a Stacking Fault on the Si(111)–(7 × 7) Surface Studied by Monte Carlo Simulations;Journal of the Physical Society of Japan;2018-03-15
2. Microscopic mechanism of the homoepitaxy onSi(111)7×7;Physical Review B;2016-07-05
3. Antimony induced cluster formation on the Si(111)7 × 7 surface;Surface Science;2013-02
4. Kinetics of two-dimensional island nucleation on reconstructed surfaces;Physical Review B;2012-01-17
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