Submonolayer cluster formation at the Ge/Al2O3(102) interface-Reference-Cited by-同舟云学术

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Submonolayer cluster formation at the Ge/Al2O3(102) interface

Published:1991-06 Issue:1-3 Volume:249 Page:159-170
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Malafsky Geoffrey P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference45 articles.

1. Vapor Deposition,1986

2. Deposition Technologies for Films and Coatings,1982

3. Nucleation and growth of thin films

4. Surface Mobilities on Solid Materials;Venables,1983

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substrate-dependent carrier mobility in polycrystalline Ge thin films;Materials Today Communications;2024-08

2. Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs;Surface Science;2009-11

3. Ab initio molecular dynamics simulations of properties of a-Al2O3 /vacuum and a-ZrO2 /vacuum vs a-Al2O3∕Ge(100)(2×1) and a-ZrO2∕Ge(100)(2×1) interfaces;The Journal of Chemical Physics;2009-03-28

4. Epitaxy of Ge on sapphire;Materials Science and Engineering: A;2002-01

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