Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs-Reference-Cited by-同舟云学术

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

Published:2009-11 Issue:21 Volume:603 Page:3191-3200
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Chagarov Evgueni A.,Kummel Andrew C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference60 articles.

1. High Mobility Strained Ge pMOSFETs With High-$\kappa$ /Metal Gate

2. Device structures and carrier transport properties of advanced CMOS using high mobility channels

3. High performance germanium MOSFETs

4. Interfacial atomic structures, energetics and band offsets of Ge:ZrO2 interfaces

5. Fluorine incorporation at HfO2∕SiO2 interfaces in high-k metal-oxide-semiconductor gate stacks: Local electronic structure

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