REM studies of Ge growth on Au-adsorbed Si(001) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. Surfactants in epitaxial growth
2. Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy
3. Molecular beam epitaxial growth of Si on Ga‐activated Si(111) surface
4. Influence of surfactants in Ge and Si epitaxy on Si(001)
5. The growth of Ge on a surface: surface catalytic epitaxy
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Capillarity-driven migration of a thin Ge wedge in contact with a bicrystalline Au film;Acta Materialia;2011-04
2. STM topography and manipulation of single Au atoms on Si(100);Physical Review B;2009-06-30
3. Dynamics of Au-adsorption-induced step bunching on a Si(001) vicinal surface studied by reflection electron microscopy;Physical Review B;1999-07-15
4. Bi surfactant mediated epitaxy of Ge on Si(111);Thin Solid Films;1999-04
5. Gold-induced faceting on a Si(001) vicinal surface: Spot-profile-analyzing LEED and reflection-electron-microscopy study;Physical Review B;1999-01-15
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