The growth of Ge on a surface: surface catalytic epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference8 articles.
1. Raman scattering from GexSi1−x/Si strained‐layer superlattices
2. Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy
3. Initial stage of heteroepitaxy of Ge on Si(111)-7 × 7 and (100)-2 × 1 surfaces studied by low-energy electron-loss spectroscopy (LEELS)
4. Observations on intensity oscillations in reflection high‐energy electron diffraction during epitaxial growth of Si(001) and Ge(001)
5. Structural properties of heteroepitaxial Ge films on a Si(100)‐2×1 surface
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3. Structure of the Te/Ge(001) surface studied by SPA-LEED;Surface Science;2004-08
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